Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs
نویسندگان
چکیده
منابع مشابه
Static-Noise-Margin Analysis of Modified 6T SRAM Cell during Read Operation
As modern technology is spreading fast, it is very important to design low power, high performance, fast responding SRAM(Static Random Access Memory) since they are critical component in high performance processors. In this paper we discuss about the noise effect of different SRAM circuits during read operation which hinders the stability of the SRAM cell. This paper also represents a modified ...
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ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2019
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-018-9429-2